VS-3EJH01-M3 www.vishay.com vishay semiconductors revision: 20-nov-14 1 document number: 94903 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hyperfast rectifier, 3 a fred pt ? features ? hyperfast recovery time, reduced q rr , and soft recovery ? 175 c maximum operating junction temperature ? low forward voltage drop ? low leakage current ? specific for output and snubber operation ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? meets jesd 201 class 2 whisker test ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 description / applicatons state of the art hyperfast recovery rectifiers specifically designed with optimized perf ormance of forward voltage drop and hyperfast recovery time. the planar structure and the plat inum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. these devices are intended for use in snubber, boost, lighting, as high frequency rectifiers and freewheeling diodes. the extremely optimized stored charge and low recovery current minimize the switchin g losses and reduce power dissipation in the switching element. note (1) device on pcb with 8 mm x 16 mm soldering lands ? product summary package do-221ac (slimsma) i f(av) 3 a v r 100 v v f at i f 0.93 v t rr 30 ns t j max. 175 c diode variation single die cathode anode s lim s ma (do-221ac) absolute maximum ratings parameter symbol test conditions values units peak repetitive reverse voltage v rrm 100 v average rectified forward current i f(av) t c = 145 c (1) 3 non-repetitive peak surge current i fsm t j = 25 c 85 a operating junction and storage temperatures t j , t stg -65 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units breakdown voltage, ? blocking voltage v br , v r i r = 100 a 100 - - v forward voltage v f i f = 3 a - 0.86 0.93 i f = 3 a, t j = 125 c - 0.74 0.78 reverse leakage current i r v r = v r rated - - 2 a t j = 125 c, v r = v r rated - 0.5 8 junction capacitance c t v r = 100 v - 13 - pf
VS-3EJH01-M3 www.vishay.com vishay semiconductors revision: 20-nov-14 2 document number: 94903 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test co nditions min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 50 a/s, v r = 30 v - 26 - ns i f = 0.5 a, i r = 1 a, i rr = 0.25 a - - 30 t j = 25 c i f = 3 a ? di f /dt = 200 a/s ? v r = 160 v -18- t j = 125 c - 26 - peak recovery current i rrm t j = 25 c - 2.5 - a t j = 125 c - 4 - reverse recovery charge q rr t j = 25 c - 23 - nc t j = 125 c - 50 - thermal - mechanical specifications parameter symbol test cond itions min. typ. max. units maximum junction and storage temperature range t j , t stg -65 - 175 c thermal resistance, ? junction to case r thjc device mounted on pcb with 8 mm x 16 mm soldering lands --10 c/w thermal resistance, ? junction to ambient r thja device mounted on pcb with 2 mm x 3.5 mm soldering lands - - 110 approximate weight 0.032 g 0.0011 oz. marking device case style slimsma (do-221ac) 3h1 0.1 1 10 100 0.3 0.6 0.9 1.2 1.5 i f - instantaneous forward current (a) v f - forward voltage drop (v) t j = 125 c t j = 25 c t j = 175 c t j = 150 c v r - reverse voltage (v) i r - reverse current (a) 10 100 0.01 0.1 1 0.001 0 20406080100 25 c 125 c 150 c 175 c
VS-3EJH01-M3 www.vishay.com vishay semiconductors revision: 20-nov-14 3 document number: 94903 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum allowable case temperature vs. average forward current fig. 5 - forward power loss characteristics fig. 6 - typical reverse recovery vs. di f /dt fig. 7 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; ? pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); ? pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r v r - reverse voltage (v) c t - junction capacitance (pf) 100 10 1 0 20406080100 140 145 150 155 160 165 170 175 180 0 0.5 1 1.5 2 2.5 3 3.5 allowable case temperature ( c) i f(av) - average forward current (a) sq uare wave (d = 0.50) 80 % rated v r applied s ee note (1) dc i f(av) - average forward current (a) 0 0. 1 1. 2 2. 3 3. 0 0. 1.2 1. 2.4 3 3. 4.2 4. average power loss (w) d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 dc rm s limit 5 10 15 20 25 30 35 100 1000 t rr (ns) di f /dt (a/s) 125 c 25 c 10 20 30 40 50 60 70 100 1000 q rr (nc) di f /dt (a/s) 125 c 25 c
VS-3EJH01-M3 www.vishay.com vishay semiconductors revision: 20-nov-14 4 document number: 94903 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 8 - reverse recovery waveform and definitions ordering information table ordering information (example) preferred p/n quantity per reel minimum order quanti ty packaging description VS-3EJH01-M3/6a 3500 3500 7"diamet er plastic tape and reel VS-3EJH01-M3/6b 14 000 14 000 13"diameter plastic tape and reel links to related documents dimensions www.vishay.com/doc?95771 part marking information www.vishay.com/doc?95562 packaging information www.vishay.com/doc?88869 q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr 2 - current rating (3 = 3 a) 3 - circuit configuration: 4 - j = slimsma package 5 - process type, h = hyperfast recovery 6 - voltage code (01 = 100 v) 7 - -m3 = halogen-free, rohs-compliant, and terminations lead (pb)-free device code 5 1 3 2 4 6 7 vs- 3 e j h 01 -m3 1 - vishay semiconductors product e = single diode
outline dimensions www.vishay.com vishay semiconductors revision: 21-jul-14 1 document number: 95571 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 do-221ac (slimsma) dimensions in inches (millimeters) cathode band 0.106 (2.70) 0.098 (2.50) 0.047 (1.20) 0.030 (0.75) 0.047 (1.20) min. 0.047 (1.20) min. 0.123 (3.12) max. 0.217 (5.52) ref. 0.060 (1.52) min. 0.057 (1.45) 0.049 (1.25) 0.039 (1.00) 0.035 (0.90) 0.012 (0.30) 0.006 (0.15) 0.171 (4.35) 0.163 (4.15) 0.211 (5.35) 0.199 (5.05) typ.: 0.019 (0.48) mounting pad layout
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